Two-dimensional (2D) materials with anisotropic electronic structures possess promising prospect for ultra-scaled field effect transistors (FETs), such as black phosphorene. Here, the quantum transport properties of anisotropic 2D group VA-VA monolayers with puckered configuration are studied in 5 nm FETs using density functional theory and nonequilibrium Green’s function. Through evaluating and comparing the transport effective mass ( $\text{m}_{x}$ ) and density of state ( $\text{m}_{\text {DOS}}$ ) of these 2D group VA-VA monolayers, we uncover the physical mechanism of the anisotropic electronic structures for the performances of 2D ultra-short FETs. These electronic structures can make the channel with a small $\text{m}_{x}$ hold a high $\text{m}_{\text {DOS}}$ , or the channel with heavy $\text{m}_{x}$ hold a small $\text{m}_{\text {DOS}}$ , which is beneficial to obtain high saturation current, steep sub-threshold swing, and thus a high on-current. Hence, the strong anisotropic electronic structure can be regarded as a target feature for designing high performance 2D FETs, which provides a guideline for exploring excellent 2D channels for ultra-scaled electronic devices.

中文翻译：

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发现用于量子传输的2D组VA-VA单分子层的各向异性电子结构

具有各向异性电子结构的二维（2D）材料对于超规模场效应晶体管（FET）（如黑色磷光体）具有广阔的前景。在这里，使用密度泛函理论和非平衡格林函数在5 nm FET中研究了具有褶皱结构的各向异性二维VA-VA单层的量子传输性能。通过评估和比较运输有效质量（ $ \ text {m} _ {x} $ ）和状态密度（ $ \ text {m} _ {\ text {DOS}} $ ）这些2D组VA-VA单层），我们揭示了各向异性电子结构的物理机制，以实现2D超短FET的性能。这些电子结构可以使通道具有较小的 $ \ text {m} _ {x} $ 高举 $ \ text {m} _ {\ text {DOS}} $ ，或频道重 $ \ text {m} _ {x} $ 拿着一个小 $ \ text {m} _ {\ text {DOS}} $ ，这有利于获得高饱和电流，陡峭的亚阈值摆幅，从而获得高导通电流。因此，可以将强大的各向异性电子结构视为设计高性能2D FET的目标功能，这为探索超大规模电子设备的出色2D通道提供了指南。