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Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-11-17 , DOI: 10.1109/led.2020.3038808
Luca Nela , Halil Kerim Yildirim , Catherine Erine , Remco Van Erp , Peng Xiang , Kai Cheng , Elison Matioli

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resulting in excellent DC performances. However, their dynamic performance is yet to be demonstrated, especially due to the absence of an effective passivation technique for their 3D structure. Here, we present a surface passivation technology for multi-channel devices based on a conformal deposition of a thin SiO 2 interlayer followed by a low-pressure chemical vapor deposition (LPCVD) Si 3 N 4 layer around the multi-channel fins, which enables to effectively reduce the electron traps both at the AlGaN top surface and at the fin sidewalls. Such an approach led to a significant reduction of the dynamic on-resistance ( ${R}_{\text {ON}}$ ) in multi-channel devices under large off-state voltages of 350 V and comparable dynamic performance with passivated single-channel reference devices. This work proves that, in addition to the excellent DC performance, the multi-channel technology can offer reduced current collapse, unveiling the potential of this platform for future power electronic applications.

中文翻译:

多通道GaN功率晶体管的共形钝化以减少电流塌陷

近来,其中堆叠了多个AlGaN / GaN层以实现多个二维电子气(2DEG)的多通道功率器件,已导致器件电导率显着提高,同时保持了高击穿电压,从而产生了出色的DC性能。但是,它们的动态性能尚未得到证实,特别是由于其3D结构缺少有效的钝化技术。在这里,我们介绍了一种用于多通道器件的表面钝化技术,该技术基于薄的SiO 2中间层的保形沉积, 然后进行低压化学气相沉积(LPCVD)Si 3 N 4在多通道鳍片周围形成一层层,这可以有效地减少AlGaN顶表面和鳍片侧壁处的电子陷阱。这种方法大大降低了动态导通电阻( $ {R} _ {\ text {ON}} $ )在350 V的大关态电压下具有可与钝化的单通道参考器件相媲美的动态性能的多通道器件。这项工作证明,除了出色的直流性能外,多通道技术还可以减少电流崩塌,为未来的电力电子应用揭示了该平台的潜力。
更新日期:2020-12-25
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