The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel resistance. This is especially useful in silicon carbide where the inversion layer mobility is ~10× lower than in silicon. This innovation can reduce the on-resistance of SiC power MOSFETs at blocking voltages below 1,000 V where over 68% of the applications lie.

中文翻译：

---

三栅极 MOSFET：4H-SiC 中的新型垂直功率晶体管

三栅极 MOSFET 是具有多个亚微米 FinFET 通道的垂直功率晶体管。FinFET结构在不增加器件面积的情况下，增加了MOS反型层的载流宽度，从而降低了沟道比电阻。这在反型层迁移率比硅低约 10 倍的碳化硅中尤其有用。这项创新可以在 1,000 V 以下的阻断电压下降低 SiC 功率 MOSFET 的导通电阻，超过 68% 的应用位于该处。