Process and parametric variation negatively impact the performance and yield of analog and digital circuits in advanced nodes. To alleviate this effect, we propose a technique to electrically adjust the threshold voltage of CMOS transistors in a post-fabrication setting in a non-volatile manner. This technique, which relies on self-heating assisted trapping of charge in high-k gate dielectric (e.g. HfOx) used in advanced CMOS nodes, does not require any extra fabrication step. In this paper, we use charge trapping for wideband non-volatile frequency tuning of a ring oscillator. We have demonstrated that the frequency of the ring oscillator can shift from 2075MHz to 1746MHz, when a supply voltage of 0.8V is used. This work serves as a foundation for non-volatile tuning, reconfiguration, and obfuscation of chips and IP blocks. The chip was fabricated in GlobalFoundries 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS process.

中文翻译：

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通过 22nm CMOS 高 k 栅介质中的电荷俘获对环形振荡器进行非易失性宽带频率调谐

工艺和参数变化会对高级节点中模拟和数字电路的性能和良率产生负面影响。为了减轻这种影响，我们提出了一种技术，以非易失性方式在制造后设置中电调节 CMOS 晶体管的阈值电压。这种技术依赖于在高级 CMOS 节点中使用的高 k 栅极电介质（例如 HfOx）中的自加热辅助捕获电荷，不需要任何额外的制造步骤。在本文中，我们使用电荷捕获来对环形振荡器进行宽带非易失性频率调谐。我们已经证明，当使用 0.8V 的电源电压时，环形振荡器的频率可以从 2075MHz 转变为 1746MHz。这项工作为芯片和 IP 块的非易失性调整、重新配置和混淆奠定了基础。