The structural design of excellent absorption and electron collection is the main challenge of the nanowire array (NWA) photocathode. Herein, the light trapping and photoemission performance of GaN and graded compositional AlGaN‐inclined NWA are systematically researched. The finite‐difference time domain method (FDTD) is used to calculate the light absorption under different inclined angles and array spacings. The results show that the NWA with an inclined angle of 0.4°–0.6° has greater light‐trapping capacity, which obtains up to 97% light absorption at a wavelength of 267 nm. The inclined graded compositional AlGaN NWA with a built‐in electric field has better photoemission performance. The external electric field further improves the electron collection capacity of the NWA cathode. The inclined AlGaN NWA cathode with the best parameters θ = 0.6°, L = 180 nm, and E_out = 2 V μm⁻¹ obtains a quantum efficiency of 47.57% and collection efficiency of 31.09%. The study of the inclined graded compositional AlGaN NWA cathode assisted by the electric field provides an effective method for further utilization of incident light and emitted electrons.

中文翻译：

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倾斜GaN和AlGaN纳米线阵列的电子收集和光陷阱增强

出色的吸收和电子收集的结构设计是纳米线阵列（NWA）光电阴极的主要挑战。在本文中，系统地研究了GaN和梯度成分AlGaN倾斜的NWA的光捕获和光发射性能。时域有限差分法（FDTD）用于计算不同倾斜角和阵列间距下的光吸收。结果表明，倾斜角为0.4°–0.6°的NWA具有更大的光捕获能力，在267 nm的波长下可获得高达97％的光吸收。具有内置电场的倾斜梯度成分AlGaN NWA具有更好的光发射性能。外部电场进一步提高了NWA阴极的电子收集能力。最佳参数的倾斜式AlGaN NWA阴极θ  = 0.6°，L  = 180 nm，E _out  = 2 Vμm ^- 1，量子效率为47.57％，收集效率为31.09％。电场辅助下的倾斜梯度成分AlGaN NWA阴极的研究为进一步利用入射光和发射电子提供了有效的方法。