The proton yields from Si(111)7 $\times$ 7 and Si(100)2 $\times$ 1 reconstructed surfaces irradiated with slow $(v<0.25v_{\mathrm{Bohr}})$ highly charged Xe ions are obtained. ${\mathrm{H}}_2\mathrm{O}$ molecules adsorbed over time on the surfaces at room temperature, under ultra-high vacuum can be detected as an increase of the proton yield. For the Si(100)2 $\times$ 1 surface, the proton yield with HCI-irradiation time is discussed based on temporal variation of the ${\mathrm{H}}_2\mathrm{O}$ coverage. The proton desorption efficiency with ${\mathrm{Xe}}^{50+}$ is more than about ten times and twice as compared with ${\mathrm{Xe}}^{29+}$ and ${\mathrm{Xe}}^{44+},$ respectively. For the Si(111)7 $\times$ 7 and Si(100)2 $\times$ 1 surfaces, the proton yield in each time increases with the charge states $q$ to the power of 6 and 4, respectively, and is changed with time with the power laws held on.

质子从Si（111）7产生 $\times$ 7和Si（100）2 $\times$ 1慢速照射重建表面 $（v<0.25v_{\mathrm{玻尔}}）$ 获得高电荷的Xe离子。 ${\mathrm{H}}_2\mathrm{Ø}$随着质子产率的增加，在室温下，超高真空下，随着时间的推移吸附在表面上的分子可被检测到。对于Si（100）2 $\times$ 在图1的表面上，基于HCI的时间变化讨论了质子产率与HCI辐射时间的关系 ${\mathrm{H}}_2\mathrm{Ø}$覆盖范围。质子解吸效率随${\mathrm{e}}^{50+}$ 是十倍以上两倍 ${\mathrm{e}}^{29+}$ 和 ${\mathrm{e}}^{44+}，$分别。对于Si（111）7 $\times$ 7和Si（100）2 $\times$ 1表面，每次质子产率随电荷态的增加而增加 $q$ 分别乘以6和4的幂，并且在保持幂律不变的情况下随时间变化。