We studied the transport properties of meso-junctions of semiconducting (Sm) highly doped Si with different superconductors (Sc) through point contact Andreev reflection (PCAR) spectroscopy. Spectra of low transparency point contacts between Si and In showed an enhancement in the superconducting energy gap of In. This was due to the effect of an additional gap arising from the Schottky barrier at the Sm-Sc interface. For higher transparency Si-Nb and Si-Pb point contacts, no gap enhancement was observed though there were weak sub gap features. These were due to proximity induced interface superconductivity known to occur for Sm-Sc junctions of high transparency.

中文翻译：

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具有不同超导体的高掺杂硅介观结的传输

我们通过点接触 Andreev 反射 (PCAR) 光谱研究了具有不同超导体 (Sc) 的半导体 (Sm) 高掺杂 Si 的介观结的传输特性。Si 和 In 之间的低透明度点接触光谱显示 In 的超导能隙增强。这是由于 Sm-Sc 界面处的肖特基势垒引起的额外间隙的影响。对于更高透明度的 Si-Nb 和 Si-Pb 点接触，尽管存在弱子间隙特征，但未观察到间隙增强。这些是由于已知的高透明度 Sm-Sc 结发生的邻近感应界面超导性。