This paper describes a design of 3 GHz–12 GHz MMIC distributed Low Noise Amplifiers (LNAs) for Ultra Wideband communications systems. The proposed circuit is a common source and cascode topology using a standard 0.18 μm ED02AH process from OMMIC foundry. The ultra-wideband LNA achieves a power gain of 16.9 ± 1.7 dB and an average noise figure of 2.9 ± 0.58 dB. The input and output reflection coefficients are less than −10 dB, the reverse gain S₁₂ is less than −37dB and a high linearity IIP3 of [4–6.2] dBm. The chip area including testing pads is only about 1.3 × 1.3 mm².

中文翻译：

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适用于UWB应用的高增益0.18μm-GaAsMMIC级联分布低噪声放大器

本文介绍了一种用于超宽带通信系统的3 GHz–12 GHz MMIC分布式低噪声放大器（LNA）的设计。拟议的电路是使用OMMIC铸造厂的标准0.18μmED02AH工艺的常见源和共源共栅拓扑。超宽带LNA的功率增益为16.9±1.7 dB，平均噪声系数为2.9±0.58 dB。输入和输出反射系数小于-10 dB，反向增益S _{1 2}小于-37dB且[4–6.2] dBm的高线性IIP3。包括测试焊盘的芯片面积仅为1.3×1.3 mm ²。