Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science. To date, the atomic and electronic origins of SPEs within hBN have not been well understood, and no studies have reported photochromism or explored cross correlations between hBN SPEs. Here, we combine irradiation time-dependent microphotoluminescence spectroscopy with two-color Hanbury Brown–Twiss interferometry in an investigation of the electronic structure of hBN defects. We identify evidence of photochromism in an hBN SPE that exhibits single-photon cross correlations and correlated changes in the intensity of its two zero-phonon lines.

中文翻译：

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六方氮化硼单光子发射极中光致变色的证据

固态单光子发射器（SPE），例如六方氮化硼（hBN）内的明亮，稳定的室温缺陷，对量子信息科学越来越感兴趣。迄今为止，hBN内SPE的原子和电子起源尚未得到很好的理解，也没有研究报道光致变色或hBN SPE之间的相互关系。在这里，我们结合了与时间有关的微光致发光光谱技术和两种颜色的Hanbury Brown-Twiss干涉测量技术，以研究hBN缺陷的电子结构。我们在hBN SPE中发现了光致变色的证据，该hBN SPE表现出单光子互相关和两条零声子线强度的相关变化。