In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (V_th), and increases the collector current (I_CE) at the same gate voltage (V_g). The raising I_CE is mainly attributed to the negative shift of the V_th. However, at the same overdrive voltage (V_ov = V_g - V_th), the I_CE at small V_CE increases and the I_CE at high V_CE decreases after irradiation. The distinctive response of the out-put characteristics after irradiation is ascribed to the positive trapped charges in the field oxide (FOX) layer and the buried oxide (BOX) layer. The inimitable out-put behavior occurs at whatever the sign of the gate bias voltage during irradiation. The degradation mechanisms of the TID effects on the SOI-LIGBT are further analyzed and confirmed by simulation.

本文介绍了在总电离剂量（TID）辐照后，绝缘体上硅横向绝缘栅双极型晶体管（SOI-LIGBT）的电性能的实验研究。我们发现，在相同的栅极电压（V _g）下，TID辐照降低了阈值电压（V _th），并增加了集电极电流（I _CE）。I _CE的上升主要归因于V _th的负移。然而，在相同的过驱动电压（V _OV = V_克- V_日）中，I _CE在小V _CE上升和I _CE在高得五世_CE照射后减少。辐照后输出特性的独特响应归因于场氧化物（FOX）层和掩埋氧化物（BOX）层中的正捕获电荷。在辐照期间，无论栅极偏置电压的符号是什么，都将发生无与伦比的输出行为。通过仿真进一步分析了TID对SOI-LIGBT的影响。