Cluster magnetorheological finishing is a novel machining method for attaining super-smooth and even surfaces. The aim of the research is to strengthen the role of cluster magnetorheological polishing pads and improve the material removal rate (MRR) while attaining smooth and undamaged surfaces. To this end, a novel polishing disk with three-dimensional (3D) microstructures was formed by machining an array of holes on the surface of a polishing disk. The influences of the type of abrasives, geometric parameters of the holes, and polishing time on the roughness and MRR of the machined surface were explored. The test result showed that a polishing disk with multiple holes contributes to a higher MRR and a lower surface roughness relative to a smooth polishing disk, significantly improving the polishing effect; the diameter and distribution of multiple holes on the surface of the polishing disk exhibit a significant effect on the polishing process. The polishing effect with silica sols is most remarkably improved. The solid-state chemical reaction between sapphire and silica sols promotes material removal; relative to a smooth polishing disk, the MRR is increased by 107% and the surface roughness is decreased by 11%. The surface roughness is reduced from Ra 5.14 nm to Ra 0.24 nm by utilising the optimised technological parameters. Under the synergistic action of mechanical removal enhancement of polishing disks with multiple holes and chemical removal of silica sol sapphire can obtain super smooth undamaged surfaces efficiently.

团簇磁流变精加工是一种用于获得超光滑和平整表面的新颖加工方法。该研究的目的是增强簇磁流变抛光垫的作用，并提高材料去除率（MRR），同时获得光滑无损的表面。为此，通过在抛光盘的表面上加工孔的阵列来形成具有三维（3D）微结构的新型抛光盘。探讨了磨料类型，孔的几何参数和抛光时间对加工表面粗糙度和MRR的影响。测试结果表明，与光滑的抛光盘相比，带有多个孔的抛光盘有助于提高MRR和降低表面粗糙度，从而显着提高抛光效果。抛光盘表面上的多个孔的直径和分布对抛光过程具有重要影响。硅溶胶的抛光效果得到最明显的改善。蓝宝石和硅溶胶之间的固态化学反应可促进材料的去除。相对于光滑的抛光盘，MRR增加了107％，表面粗糙度减少了11％。通过使用优化的技术参数，表面粗糙度从Ra 5.14 nm降低到Ra 0.24 nm。在机械去除增强具有多个孔的抛光盘和化学去除硅溶胶蓝宝石的协同作用下，可以有效地获得超光滑，无损伤的表面。硅溶胶的抛光效果得到最明显的改善。蓝宝石和硅溶胶之间的固态化学反应可促进材料的去除。相对于光滑的抛光盘，MRR增加了107％，表面粗糙度减少了11％。通过使用优化的技术参数，表面粗糙度从Ra 5.14 nm降低到Ra 0.24 nm。在机械去除增强具有多个孔的抛光盘和化学去除硅溶胶蓝宝石的协同作用下，可以有效地获得超光滑，无损伤的表面。硅溶胶的抛光效果得到最明显的改善。蓝宝石和硅溶胶之间的固态化学反应可促进材料的去除。相对于光滑的抛光盘，MRR增加了107％，表面粗糙度减少了11％。通过使用优化的技术参数，表面粗糙度从Ra 5.14 nm降低到Ra 0.24 nm。在机械去除增强具有多个孔的抛光盘和化学去除硅溶胶蓝宝石的协同作用下，可以有效地获得超光滑，无损伤的表面。通过使用优化的技术参数，表面粗糙度从Ra 5.14 nm降低到Ra 0.24 nm。在机械去除增强具有多个孔的抛光盘和化学去除硅溶胶蓝宝石的协同作用下，可以有效地获得超光滑，无损伤的表面。通过使用优化的技术参数，表面粗糙度从Ra 5.14 nm降低到Ra 0.24 nm。在机械去除增强具有多个孔的抛光盘和化学去除硅溶胶蓝宝石的协同作用下，可以有效地获得超光滑，无损伤的表面。