The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4 and 8 was studied using dipping and polishing conditions. Higher contamination at pH 4 than pH 8 was observed for dipping cases. In contrast, pH 8 conditions produced higher contamination than pH 4 for polishing cases. The difference in the contamination between dipping and polishing could be attributed to electrostatic attraction and chemical bonding. During polishing, weak or no chemical bonding may occur at pH 4, whereas the Ce–O–Si bond may form due to the surface charges of ceria and silica at pH 8. XPS analysis revealed that strong additional peaks related to Ce–O–Si bonding were detected for O 1s spectra at a binding energy of around 532 eV for surfaces polished at pH 8. Similar results were observed for 50 nm as well as 100 nm ceria particles. Based on the results, we concluded that ceria particles would have different adhesion behaviors for dipping and polishing at the same pH value. Also, higher ceria adhesion was observed at higher pH compared to lower pH during the CMP process, which was correlated to strong Ce–O–Si chemical bond formation due to the CMP conditions.

使用浸渍和抛光条件研究了二氧化铈颗粒（50和100 nm）在pH为4和8时具有氧化物表面的污染行为。在浸渍情况下，在pH 4处观察到比pH 8更高的污染。相反，在抛光条件下，pH 8条件比pH 4产生更高的污染。浸入和抛光之间的污染差异可能归因于静电吸引和化学键合。在抛光过程中，pH值为4时，可能不会发生化学键的弱键或没有化学键，而由于pH值为8的二氧化铈和二氧化硅的表面电荷，可能会形成Ce–O–Si键。对于在pH 8抛光的表面，在约532 eV的结合能下检测到O 1s光谱的Si键合。对于50 nm和100 nm的二氧化铈颗粒，观察到相似的结果。根据这些结果，我们得出结论，在相同的pH值下，二氧化铈颗粒在浸渍和抛光时会有不同的附着行为。另外，与在CMP过程中较低的pH值相比，在较高的pH下观察到较高的二氧化铈附着力，这与由于CMP条件而形成的强Ce-O-Si化学键有关。