This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM’s potential as a universal memory.

中文翻译：

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STT-MRAM 传感：回顾

本简介从电路设计的角度回顾了过去 20 年来自旋转移扭矩磁阻随机存取存储器 (STT-MRAM) 传感的发展。根据数据单元变化容忍特性、前置放大器和偏移容忍度对各种传感方案进行分类和描述。讨论了实现最佳参考方案、防止读取干扰、减少读取能量、准确产量估计以及克服其他非理想情况的关键突破。本次审查旨在促进先进技术节点中 STT-MRAM 传感的进一步增强，从而实现 STT-MRAM 作为通用存储器的潜力。