The window-layer stack limits the efficiency of both-side-contacted silicon heterojunction solar cells. We discuss here the combination of several modifications to this stack to improve its optoelectronic performance. These include the introduction of a nanocrystalline silicon-oxide p-type layer in lieu of the amorphous silicon p-type layer, replacing indium tin oxide with a zirconium-doped indium oxide for the front transparent electrode, capping this layer with a silicon-oxide film and applying a postfabrication electrical biasing treatment. The influence of each of these alterations is discussed as well as their interactions. Combining all of them finally enables the fabrication of a highly transparent and electrically well-performing window-layer stack, leading to a screen-printed silicon heterojunction solar cell with 24.1% efficiency. Paths toward industrialization and further improvements are finally discussed.

中文翻译：

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空穴选择性前接触堆栈实现 24.1% 效率的硅异质结太阳能电池

窗口层堆叠限制了双面接触硅异质结太阳能电池的效率。我们在这里讨论了对该堆栈的几种修改的组合，以提高其光电性能。这些包括引入纳米晶氧化硅 p 型层代替非晶硅 p 型层，用掺锆氧化铟代替氧化铟锡作为前透明电极，用氧化硅覆盖该层薄膜并应用制造后电偏压处理。讨论了这些改变中的每一个的影响以及它们的相互作用。将所有这些结合起来最终能够制造出高度透明且电性能良好的窗口层堆叠，从而产生效率为 24.1% 的丝网印刷硅异质结太阳能电池。