Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and passivation schemes is used to provide new insight into the origin of degradation of 1 Ω·cm n-type phosphorus doped FZ silicon (with nitrogen doping during growth) after annealing at 500 °C. Carrier lifetime and photoluminescence experiments are first performed with temporary room temperature surface passivation which minimizes lifetime changes which can occur during passivation processes involving thermal treatments. Temperature- and injection-dependent lifetime spectroscopy is then performed with a more stable passivation scheme, with the same samples finally being studied by deep level transient spectroscopy (DLTS). Although five defect levels are found with DLTS, detailed analysis of injection-dependent lifetime data reveals that the most detrimental defect levels could arise from just two independent single-level defects or from one two-level defect. The defect parameters for these two possible scenarios are extracted and discussed.

中文翻译：

---

n 型浮区硅中热激活缺陷的电气特性

浮区 (FZ) 硅通常被认为是体缺陷少且稳定的。然而，最近的研究表明，FZ 硅晶片中的有害缺陷可能会被热激活，并导致载流子寿命减少多达两个数量级。一种结合不同表征技术和钝化方案的稳健方法用于提供对 1Ω·cm n 型掺磷 FZ 硅（在生长过程中掺杂氮）在 500 °C 退火后退化的起源的新见解。载流子寿命和光致发光实验首先使用临时室温表面钝化进行，这可以最大限度地减少在涉及热处理的钝化过程中可能发生的寿命变化。然后使用更稳定的钝化方案执行依赖于温度和注入的寿命光谱，最终通过深能级瞬态光谱 (DLTS) 研究相同的样品。尽管 DLTS 发现了五个缺陷级别，但对依赖注入的寿命数据的详细分析表明，最有害的缺陷级别可能仅来自两个独立的单级缺陷或一个两级缺陷。提取并讨论了这两种可能场景的缺陷参数。对注入相关寿命数据的详细分析表明，最有害的缺陷水平可能仅来自两个独立的单级缺陷或一个双级缺陷。提取并讨论了这两种可能场景的缺陷参数。对注入相关寿命数据的详细分析表明，最有害的缺陷水平可能仅来自两个独立的单级缺陷或一个双级缺陷。提取并讨论了这两种可能场景的缺陷参数。