To increase the market shares of multicrystalline silicon (mc-Si) wafers obtained using diamond-wire sawing (DWS), it is necessary to develop efficient and cost-effective texturing methods. Surface texturing processes that increase light absorption are essential for manufacturing high-efficiency solar cells. The smooth surface, phase transformations, and amorphous silicon (a-Si) layer on mc-Si wafers manufactured via DWS hinder the effective texturing under conventional acidic conditions, which are typically used for multiwire slurry sawing (MWSS). To address this issue, this article focused on an efficient texturing process of DWS wafers by adapting a pre-thermal treatment (TT) process. We found that DWS mc-Si wafers could be effectively textured after the TT process by altering the surface roughness through the crystallization of surface amorphous silicon (a-Si) and phase transformation layers. For the DWS mc-Si wafers textured under conventional acidic etching conditions without TT, Rw was found to be 31.7%. The altered surface conditions achieved via the proposed TT method facilitate effective texturing on the DWS mc-Si wafer surface. Consequently, a weighted average reflectance (Rw) of 24.5% was obtained, which was comparable to that for MWSS mc-Si wafers subjected to conventional acidic etching (Rw = 24.4%). As a result of depositing a SiNx for surface passivation and antireflection coating in solar cell applications, Rw values of 8.1% and 8.3% were obtained for the thermal treated DWS mc-Si wafer and MWSS mc-Si wafer, respectively. The proposed texturing process for DWS mc-Si wafers can easily be applied to industrial inline processes using cost-effective existing acidic etching solutions.

中文翻译：

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通过本机表面非晶层的结晶，金刚石线锯多晶硅晶片的有效表面纹理化

为了增加使用金刚石线锯 (DWS) 获得的多晶硅 (mc-Si) 晶片的市场份额，有必要开发高效且具有成本效益的纹理化方法。增加光吸收的表面纹理工艺对于制造高效太阳能电池至关重要。通过 DWS 制造的 mc-Si 晶片上的光滑表面、相变和非晶硅 (a-Si) 层阻碍了传统酸性条件下的有效纹理化，这通常用于多线浆料锯切 (MWSS)。为了解决这个问题，本文重点介绍了通过采用预热处理 (TT) 工艺对 DWS 晶片进行有效的纹理化工艺。我们发现，通过表面非晶硅 (a-Si) 和相变层的结晶来改变表面粗糙度，可以在 TT 工艺后有效地对 DWS mc-Si 晶片进行纹理化。对于在没有 TT 的常规酸性蚀刻条件下纹理化的 DWS mc-Si 晶片，发现 Rw 为 31.7%。通过提议的 TT 方法实现的改变的表面条件促进了 DWS mc-Si 晶片表面的有效纹理化。因此，获得了 24.5% 的加权平均反射率 (Rw)，这与经受常规酸性蚀刻的 MWSS mc-Si 晶片的反射率 (Rw = 24.4%) 相当。由于在太阳能电池应用中沉积用于表面钝化和抗反射涂层的 SiNx，热处理 DWS mc-Si 晶片和 MWSS mc-Si 晶片的 Rw 值分别为 8.1% 和 8.3%，分别。所提议的 DWS mc-Si 晶片制绒工艺可以使用经济高效的现有酸性蚀刻溶液轻松应用于工业在线工艺。