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Temperature and Intensity Dependence of the Limiting Efficiency of Silicon Solar Cells
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2021-01-01 , DOI: 10.1109/jphotov.2020.3035115
D. Akira Engelbrecht , Thomas Tiedje

The temperature and intensity dependence of the limiting efficiencies of monofacial and bifacial silicon solar cells are calculated from the physical properties of silicon assuming light trapping by Lambertian scattering from rough surfaces. The maximum efficiency of a bifacial cell (28.92%) is lower than the efficiency of a monofacial cell (29.46%) at room temperature and Air Mass 1.5 Global illumination. The effects of electron–electron interactions on the band gap, radiative recombination rate, and optical absorption are included self-consistently. The temperature coefficient of the output power is −0.23%/°C for the optimum thickness monofacial cell at room temperature. The optimum thickness of silicon solar cells decreases strongly with temperature following a power law ${{\boldsymbol{T}}^{ - 7}}$ and thin cells have a lower temperature coefficient than thick cells. A surface recombination velocity of 1 cm/s is found to be a turning point below which surface recombination has a small effect on the efficiency.

中文翻译:

硅太阳能电池极限效率的温度和强度依赖性

单面和双面硅太阳能电池的极限效率的温度和强度依赖性是根据硅的物理特性计算的,假设光是由粗糙表面的朗伯散射捕获的。在室温和空气质量 1.5 全局照明下,双面电池的最大效率 (28.92%) 低于单面电池的效率 (29.46%)。电子-电子相互作用对带隙、辐射复合率和光吸收的影响自洽地包括在内。对于室温下最佳厚度的单面电池,输出功率的温度系数为 -0.23%/°C。硅太阳能电池的最佳厚度按照幂律 ${{\boldsymbol{T}}^{ - 7}}$ 随温度急剧下降,并且薄电池的温度系数低于厚电池。发现 1 cm/s 的表面复合速度是一个转折点,低于该速度表面复合对效率的影响很小。
更新日期:2021-01-01
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