This paper focused on studying an octagonal thermal field to improve the quality of multi-crystalline silicon ingot. A global numerical model was adopted to investigate the effects of the modified furnace on the *The numerical results indicated that a more uniform temperature distribution and lower temperature gradients were obtained in the modified furnace. Meanwhile, the experimental ingot was obtained by using the modified furnace. Experimental tests of minority carrier lifetime distribution, dislocation clusters, and the average conversion efficiency for the conventional ingot and the modified octagonal ingot were carried out. The results indicated that the modified octagonal silicon ingot could achieve lower defect density, especially near the crucible wall. Therefore, the average conversion efficiency of the modified octagonal ingot was improved by 0.12% compared with the conventional ingot. Furthermore, the mechanism and control of ingot side dislocation multiplication were discussed.

本文重点研究八边形热场，以提高多晶硅锭的质量。采用全局数值模型研究了改性炉对*的影响*数值结果表明，改性炉获得了更均匀的温度分布和较低的温度梯度。同时，使用改进的炉子获得了实验锭。进行了少数载流子寿命分布，位错簇以及常规锭和改性八边形锭的平均转化效率的实验测试。结果表明，改性八边形硅锭可实现较低的缺陷密度，特别是在坩埚壁附近。因此，与传统的铸锭相比，改性八角形铸锭的平均转化效率提高了0.12％。此外，还讨论了铸锭侧位错增殖的机理和控制。