This study presents a novel high gain operational amplifier (op-amp) and a comparator using n -type all enhancement amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The proposed op-amp employs regulated cascode topology in conjunction with capacitive bootstrap load, which enhances the gain to 159.87% (V/V) as compared to op-amp with bootstrapping load. In addition, common mode feedback is introduced in the circuit which improves the common-mode rejection ratio (CMRR) of the amplifier without hampering the output voltage swing. The proposed op-amp offers a voltage gain of 46.2 dB, phase margin of 67°, CMRR of 51.8 dB, unity gain frequency of 215 kHz and power consumption of 0.22 mW. Furthermore, a novel comparator circuit at a clock frequency of 50 kHz is reported. The power consumption of the circuit is 0.248 mW and it can discriminate a minimum voltage of 50 mV. The performance of the proposed circuits is demonstrated using an analytical model of a-IGZO in Cadence environment with a channel length of 20 µm at a supply voltage of 10 V. Further with the help of the circuits reported in this work, many sensing systems of practical importance can be developed, such as smart packaging and bio-medical wearable devices using flexible electronics.

中文翻译：

---

高增益运算放大器和具有a-IGZO TFT的比较器

这项研究提出了一种新颖的高增益运算放大器（op-amp）和一个使用 ñ 型所有增强型非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）。拟议的运放采用稳压共源共栅拓扑结构并结合了电容自举负载，与自举负载的运放相比，其增益提高到159.87％（V / V）。此外，在电路中引入了共模反馈，可改善放大器的共模抑制比（CMRR），而不会影响输出电压摆幅。拟议的运算放大器的电压增益为46.2 dB，相位裕度为67°，CMRR为51.8 dB，单位增益频率为215 kHz，功耗为0.22 mW。此外，报告了一种新颖的比较器电路，其时钟频率为50 kHz。该电路的功耗为0.248 mW，可以分辨出50 mV的最小电压。