A novel double-trench superjunction SiC metal–oxide–semiconductor field-effect transistor (MOSFET) with an integrated Schottky contact at the drain side is proposed in this study. Results indicate an improvement of 58% in reverse recovery current /charge and 22% in the trench corner electric field compared to the device without Schottky and without superjunction, respectively. This comparison became possible using mixed mode simulations in Sentaurus TCAD. While the improvement in electric field is due to incorporation of superjunction concept along the drift region, the improvement of reverse recovery is due to Schottky contact forming a barrier for the charge carriers. Using calibrated two-dimensional numerical simulations, the authors were able to demonstrate the influence of Schottky contact on reverse recovery current of the device. The superiority of the proposed device is presented by plotting the switching energy loss with respect to external gate resistance and temperature through non-isothermal simulations.

中文翻译：

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具有集成p型肖特基二极管的4H-SiC双沟槽超结MOSFET具有改善的反向恢复特性

这项研究提出了一种新颖的双沟道超结SiC金属氧化物半导体场效应晶体管（MOSFET），在漏极侧集成了肖特基接触。结果表明反向恢复电流提高了58％ /收费 在沟槽角电场中占22％ 与没有肖特基和没有超结的器件相比。使用Sentaurus TCAD中的混合模式仿真，可以进行比较。电场的改善是由于沿漂移区引入了超结概念，而反向恢复的改善是由于肖特基接触形成了电荷载流子的势垒。使用校准的二维数值模拟，作者能够证明肖特基接触对器件反向恢复电流的影响。通过通过非等温模拟绘制相对于外部栅极电阻和温度的开关能量损耗，可以显示所提出器件的优越性。