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Self-magnetic insulation in plasma opening switches
Journal of Plasma Physics ( IF 2.5 ) Pub Date : 2020-12-01 , DOI: 10.1017/s0022377820001439
Sergey V. Loginov

The paper analyses the penetration of a magnetic field into the plasma bridge of nanosecond and microsecond opening switches. For switches with a conduction time of ~100 ns, simple formulae are derived to estimate the magnetic field velocity in collisionless and collisional plasmas. It is shown that in both cases this velocity is determined by the magnetic field rise rate to plasma density ratio raised to the power of 1/2. As the conduction time is increased to ~1 ${\rm \mu}$ s, the field velocity starts to depend on the plasma aggregation by a magnetic piston. At the same time, irrespective of the conduction time, the electron flow velocity is limited by the radial drift velocity in crossed magnetic and polarization electric fields. Such a limitation suppresses the current channel conductivity with respect to the Spitzer value by a factor equal to the electron magnetization parameter raised to one or another power. On completion of the conduction phase, the rate of rise of the switch resistance is proportional to the electron drift velocity. The peak switch voltage obtained in calculations is compared with its values recorded in experiments on mega-ampere current switching. A procedure is also presented for calculating the switch parameters to obtain the maximum possible voltage in the phase of current cutoff.

中文翻译:

等离子开启开关中的自磁绝缘

本文分析了磁场对纳秒和微秒开路开关等离子桥的渗透。对于导通时间约为 100 ns 的开关,推导出简单的公式来估计无碰撞和碰撞等离子体中的磁场速度。结果表明,在这两种情况下,该速度都由磁场上升率与等离子体密度比的 1/2 次方决定。随着导通时间增加到~1 ${\rm \亩}$ s,场速度开始取决于磁性活塞的等离子体聚集。同时,与传导时间无关,电子流动速度受限于交叉磁场和极化电场中的径向漂移速度。这种限制将电流通道电导率相对于斯皮策值抑制了一个因子,该因子等于将电子磁化参数提高到一个或另一个功率。导通阶段完成后,开关电阻的上升速度与电子漂移速度成正比。将计算中获得的峰值开关电压与兆安电流开关实验中记录的值进行比较。还提出了一种计算开关参数的程序,以获得电流截止阶段的最大可能电压。
更新日期:2020-12-01
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