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Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga2Te3 Thin Films
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-12-18 , DOI: 10.1002/pssa.202070066 Dayoon Lee 1 , Taeho Kim 1 , Jaeyeon Kim 1 , Hyunchul Sohn 1
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-12-18 , DOI: 10.1002/pssa.202070066 Dayoon Lee 1 , Taeho Kim 1 , Jaeyeon Kim 1 , Hyunchul Sohn 1
Affiliation
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Ovonic Threshold Switching
中文翻译：
Zr添加对非晶Ga2Te3薄膜阈值转换特性的影响
语音阈值切换
更新日期：2020-12-18
中文翻译：
Zr添加对非晶Ga2Te3薄膜阈值转换特性的影响
语音阈值切换
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