Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers,Micro and Nanostructures

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Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers
Micro and Nanostructures ( IF 3.1 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.spmi.2020.106780
F.Z. Mami , A. Kadri , N. Mokdad , K. Zitouni

Abstract We report on a theoretical study of nonparabolicity (NP) effects on carrier lifetimes in narrow energy bandgap bulk (3D) Hg1-xCdxTe ternary alloys and their related 2D Hg1-xCdxTe/CdTe Single Quantum Well (SQW) nanostructures for Mid-infrared (MIR) Laser applications. Carrier lifetime (τ) calculations are performed within both the parabolic and the 4-band CB+HH+LH+SO nonparabolic models. We show that NP affects strongly all three main scattering processes: Auger, Schockley-Read-Hall (SRH), and radiative recombination (RR). At 300K and in mid-Cd contents (0.4

中文翻译：

非抛物线对大块 Hg1-xCdxTe 合金和中红外二维 Hg1-xCdxTe/CdTe 单量子阱激光器中载流子寿命的影响

摘要我们报告了非抛物线 (NP) 对窄能带隙体 (3D) Hg1-xCdxTe 三元合金中载流子寿命影响的理论研究及其相关的 2D Hg1-xCdxTe/CdTe 单量子阱 (SQW) 纳米结构，用于中红外（ MIR) 激光应用。载流子寿命 (τ) 计算在抛物线模型和 4 波段 CB+HH+LH+SO 非抛物线模型中进行。我们表明 NP 对所有三个主要散射过程都有强烈影响：俄歇、肖克利-雷德-霍尔 (SRH) 和辐射复合 (RR)。在 300K 和中等 Cd 含量 (0.4

更新日期：2021-02-01

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