Ultra-small red micro-LEDs (<10μm) with measurable output power have proved difficult to demonstrate. The smallest state-of-the-art red micro-LEDs (AlInGaP) to have exhibited a decent output power of ∼1.75mWmm⁻² are 20μmנ20μm in dimension. InGaN-based red micro-LED development has primarily been impeded due to the large lattice mismatch between the substrate and the quantum wells along with fabrication challenges such as low damage etching. In this work, we demonstrate 6μmנ6μm sized InGaN red micro-LEDs with an on-wafer external quantum efficiency of 0.2% and light output power reaching 2.1mWmm⁻².

中文翻译：

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用于微型显示器的超小型 (<10 μ m) 632 nm 红色 InGaN 微型 LED 的演示，具有有用的晶圆外量子效率 (>0.2%)

超小型红色微型LED（<10 μ M）具有可测量的输出功率已经证明难以证明。最小的最先进的红色微型 LED (AlInGaP) 具有 ∼1.75mWmm ^-2的不错输出功率，其尺寸为 20 μ m/20 μ m。基于 InGaN 的红色微型 LED 的开发主要由于衬底和量子阱之间的大晶格失配以及低损伤蚀刻等制造挑战而受到阻碍。在这项工作中，我们展示了 6 μ m/6 μ m 尺寸的 InGaN 红色微型 LED，其晶圆外量子效率为 0.2%，光输出功率达到 2.1mWmm ^-2。