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Optical and Electronic Properties of SymmetricInAs/(In,Al,Ga)As/InPQuantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
Physical Review Applied ( IF 4.6 ) Pub Date : 2020-12-17 , DOI: 10.1103/physrevapplied.14.064054
P. Holewa , M. Gawełczyk , A. Maryński , P. Wyborski , J.P. Reithmaier , G. Sęk , M. Benyoucef , M. Syperek

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an (In,Al,Ga)As barrier lattice matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of 1.42.0μm, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of 1.3±0.3 ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the (In,Al,Ga)As barrier to be a primary PL quenching mechanism in these QDs.

中文翻译:

在分子束外延中成熟形成的对称InAs /(In,Al,Ga)As / InP量子点的光学和电子性质:宽范围单光子电信发射极的潜在系统

我们提出了详细的光学实验研究,并得到了以下理论模型的支持 嵌入在量子点中的量子点(QD) 匹配的势垒晶格 P(001)使用分子束外延中的成熟步骤生长。该方法导致低表面密度的面内对称QD的增长,其特征在于多峰尺寸分布,导致光谱范围宽的发射在1.42.0μ对于许多近红外光子应用而言必不可少。我们发现,与/P系统中,多峰分布是由连续的点族之间的QD高度的两层差异造成的。这可能源于稳定QD成核的四级势垒合金的远距离有序性。测量光谱范围较宽的发射的光致发光(PL)寿命,我们发现几乎无色散值1.3±0.3ns。最后,我们检查了发射特性的温度依赖性。我们强调在热载流子重新分配过程中,局部状态在润湿层中的影响起着载流子储层的作用。我们确定逃逸到 这些QD中的障碍是主要的PL猝灭机制。
更新日期:2020-12-17
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