Although the research on perovskite solar cells (PSCs) has achieved rapid progress, its efficiency and stability still need to be further improved to meet the industrial requirements. The defects located inside the cells, on the surfaces, interfaces, or grain boundaries, will primarily affect carrier transportation through the formation of nonradiative recombination centers and hinder the further enhancement of the power conversion efficiency (PCE). Herein, a straightforward and simple defect passivation method is developed to increase the PCE and stability of PSCs. In the device, the N‐type semiconductor AgBiS₂ is introduced by thermal evaporation as a modified layer between the perovskite films and electron transport layer, which can improve the charge transport characteristic and bandgap optimization of PSCs. Simultaneously, dimethyl sulfoxide (DMSO) solvent mixed polyethylene glycol (PEG) is used for solvent annealing treatment, which can further improve the quality of perovskite film and reduce the trap density by increasing grain size and enhancing the crystallinity. As a result, the PSCs with dual‐interfacial modification exhibit a remarkable improvement in PCE from 18.58% to 21.19% with exceptional long‐term and moisture stability. This work provides an innovative insight for fabricating the stable and efficient PSCs toward the industrialization.

中文翻译：

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高效，稳定的钙钛矿太阳能电池的双重界面改性工程

尽管钙钛矿太阳能电池（PSC）的研究取得了快速的进展，但其效率和稳定性仍需要进一步提高以满足工业需求。位于电池内部，表面，界面或晶界上的缺陷将主要通过无辐射复合中心的形成影响载流子传输，并阻碍功率转换效率（PCE）的进一步提高。在本文中，开发了一种简单明了的缺陷钝化方法，以提高PCE和PSC的稳定性。在设备中，N型半导体AgBiS ₂通过热蒸发引入钙钛矿作为钙钛矿膜和电子传输层之间的改性层，可以改善PSC的电荷传输特性和带隙优化。同时，将二甲基亚砜（DMSO）溶剂混合聚乙二醇（PEG）用于溶剂退火处理，可通过增加晶粒尺寸和增强结晶度来进一步改善钙钛矿薄膜的质量并降低陷阱密度。结果，具有双重界面修饰的PSC的PCE显着提高，从18.58％增至21.19％，并具有出色的长期稳定性和湿气稳定性。这项工作为制造稳定，高效的PSC走向工业化提供了创新的见解。