Abstract We propose a dual-gate field-effect transistor in graphene under the irradiation of off-resonant circularly polarized light. Graphene heterojunction is created by tuning the carrier densities in graphene through a top gate and back gate. The conductance of the graphene heterojunction oscillates periodically with the top and back gate voltages due to the Fabry-Perot resonances. It is found that the proposed device can act as a promising field-effect transistor, and the “on” and “off” states are controlled by the gate voltages and the off-resonant circularly polarized light. Comparing our simulation results with the experimental results, we find that our theoretical calculations agree well with the reported experiments. Our theoretical simulation enables new possibilities for the design of a photon controllable field-effect transistor in graphene, and it can also work as an optical sensor.

中文翻译：

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石墨烯异质结中的双栅极场效应晶体管

摘要 我们提出了一种在偏共振圆偏振光照射下石墨烯中的双栅极场效应晶体管。石墨烯异质结是通过通过顶栅和背栅调节石墨烯中的载流子密度来创建的。由于法布里-珀罗共振，石墨烯异质结的电导随顶栅和背栅电压周期性振荡。发现所提出的器件可以作为一种有前途的场效应晶体管，并且“开”和“关”状态由栅极电压和非共振圆偏振光控制。将我们的模拟结果与实验结果进行比较，我们发现我们的理论计算与报告的实验非常吻合。