In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1R configuration. We work with the fact that the switching occurs in the narrowest zone of the conductive filament due to changes caused by the electric field. This active region is represented by a net of vertical connections, each one composed of three electrical elements: two of them are always low resistive (LR) while the third one acts as a breaker and can be low or high resistive (HR). The breaker can change its state according to a switching probability (P_s), which depends on the voltage drop in the breaker and the threshold voltage, V_set or V_reset for the set or reset process, respectively. This approach gives the model the stochastic behavior and generates the variability observed in the current–voltage curves of most of ReRAM devices. Further, we add another resistor in series in the circuit to represent the electrical signal of the transistor. By comparing measured and simulated IV curves of HfO₂-based ReRAM devices of two different scales, nm² and µm², we validated the model. The flexibility and straightforward implementation of this resistive switching model make it a powerful tool for studying ReRAM memories and other stochastic devices.

在本文中，我们为具有1T1R配置的ReRAM器件的电阻切换提出了一个随机模型。我们工作的事实是，由于电场的变化，切换发生在导电丝的最窄区域。该有源区域由垂直连接网表示，每个垂直连接由三个电气元件组成：其中两个电气元件始终为低电阻（LR），而第三个电气元件用作断路器，可以为低电阻或高电阻（HR）。断路器可以根据开关概率（P _s）改变其状态，该概率取决于断路器中的电压降和阈值电压，V _set或V _reset分别用于设置或重置过程。这种方法为模型提供了随机行为，并产生了大多数ReRAM器件的电流-电压曲线中观察到的变化。此外，我们在电路中串联了另一个电阻，以代表晶体管的电信号。通过比较两种不同规模的基于HfO ₂的ReRAM器件nm ²和µ m ^2的测量和模拟IV曲线，我们验证了模型。电阻切换模型的灵活性和直接实现方式使其成为研究ReRAM存储器和其他随机设备的强大工具。