A mathematical model of the Green-Naghdi photo-thermoelastic model due to ramp-type heating is presented to study the photo- thermo-elastic waves in a two-dimension semi-conductor material. By using Fourier and Laplace transforms with the eigenvalue scheme, the variables are analytically obtained. A semiconductor media such as silicon is investigated. Numerical outcomes for all the physical quantities are implemented and illustrated graphically. The results show that the ramp-type source has varying degrees of influence on physical quantities. The derived methods are evaluated with numerical outcomes which are applied to the semi-conductor material in simplified geometry. Finally, it can be found that the ramp-type heating source has great effects on the studying fields.

为了研究二维半导体材料中的光热弹性波，提出了一种绿色的Naghdi光热弹性模型的数学模型，该模型是由斜坡型加热引起的。通过对特征值方案使用傅立叶变换和拉普拉斯变换，可以解析地获得变量。研究了诸如硅的半导体介质。所有物理量的数值结果均以图形方式实现和说明。结果表明，斜坡型源对物理量的影响程度不同。用数值结果评估派生的方法，将其应用于简化几何形状的半导体材料。最后，可以发现斜坡型加热源对研究领域有很大的影响。