Recently, two‐dimensional (2D) magnetic van der Waals materials have drawn great attention as they are remarkably promising in numerous vital areas, such as data storage and information processing. Theoretically, bilayer (BL) 2H‐VSe₂ has been predicted to be an A‐type 2D antiferromagnetic van der Waals crystal (intralayer ferromagnetism and interlayer antiferromagnetism) and to have electrically‐induced half‐metallicity. Herein, by using ab initio quantum transport simulations, BL 2H‐VSe₂ spin devices are designed and spin‐resolved transport properties are investigated for the first time. The spin‐filter efficiency (SFE) of the dual‐gated BL 2H‐VSe₂ spin filter reaches up to 99%, and the conductance on‐off ratio of this device is up to 10⁶. Also, the conductance on‐off ratio of the quadruple‐gated BL 2H‐VSe₂ spin field effect transistor can reach 4 × 10³ after reversing the spin direction. This work shows the high performance of the BL 2H‐VSe₂ in spintronic devices and will motivate further studies of the spin devices based on this kind of material.

中文翻译：

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基于双层VSe2的高性能自旋滤波器和自旋场效应晶体管

近年来，二维（2D）范德华磁性材料受到广泛关注，因为它们在许多重要领域（例如数据存储和信息处理）都非常有前途。从理论上讲，双层（BL）2H‐VSe ₂已被预测为A型二维反铁磁性范德华晶体（层内铁磁性和层间反铁磁性）并且具有电诱导的半金属性。在本文中，通过从头算起量子传输模拟，设计了BL 2H‐VSe ₂自旋器件，并首次研究了自旋分辨的传输性质。双门BL 2H‐VSe ₂自旋滤波器的自旋滤波器效率（SFE）高达99％，该设备的电导通/断比高达10 ⁶。同样，在反转自旋方向后，四栅极BL 2H-VSe ₂自旋场效应晶体管的电导通/断比可以达到4×10 ³。这项工作展示了BL 2H‐VSe ₂在自旋电子器件中的高性能，并将激发基于这种材料的自旋器件的进一步研究。