Here we report on a robust deep ultraviolet (UV) photodetector based on hexagonal-boron nitride (h-BN) flakes. Metal-semiconductor-metal (MSM) photodetector was fabricated on mechanically exfoliated multilayered h-BN flake using high work function metal platinum (Pt). In this way, Schottky barrier height of 0.85 eV and ideality factor of 1.01 was obtained. The photocurrent at 205 nm was found to be 10 times higher than the dark current. The photodetector exhibited a responsivity of 5.2 mA/W at 10 V with incident power density of only 44.6 μW/cm². A stable temporal response was observed by repeatedly switching on and off the incident light. The robustness of the photodetector was tested by varying the temperature from room temperature (RT) to 200 °C. Responsivity of 32 mA/W and photo to dark current ratio (PDCR) of 0.35 was obtained at 10 V, indicating good thermal stability of the photodetector.

在这里，我们报告基于六方氮化硼（h-BN）薄片的坚固的深紫外（UV）光电探测器。使用高功函数金属铂（Pt）在机械剥落的多层h-BN薄片上制造了金属半导体金属（MSM）光电探测器。以此方式，获得了0.85eV的肖特基势垒高度和1.01的理想因子。发现205nm处的光电流比暗电流高10倍。光电探测器在10 V时的响应度为5.2 mA / W，入射功率密度仅为44.6μW/ cm ²。通过反复打开和关闭入射光，观察到稳定的时间响应。通过将温度从室温（RT）更改为200°C，测试了光电探测器的坚固性。在10 V时获得32 mA / W的响应度和0.35的光暗电流比（PDCR），表明该光电探测器具有良好的热稳定性。