Abstract

The structural, mechanical, and electrophysical properties of Al–B, Al–B–C, and Al–B–Si–C coatings obtained by dual magnetron sputtering of AlB₂, SiC, and graphite targets are studied. During deposition, the current applied to the AlB₂-containing target (I_AlB) is used as a main variable parameter. Deposited coatings are characterized by X-ray diffraction, infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Knoop microhardness tests, and current–voltage characteristic measurements. It is established that all the deposited coatings are X-ray amorphous materials. The FTIR and XPS results show that the B–B, Al–B, B–O, and Al–O bonds are main bonds in all the deposited coatings. Dual sputtering of targets with AlB₂ and C, and AlB₂ and SiC gives rise to the formation of additional B–C, Si–C, and C–C main bonds in the deposited coatings. It is found the coatings are strengthened with an increase in the I_AlB current as a result of increasing the number of B–B and Al–B bonds. The current–voltage characteristics of Al–B and Al–B–C coatings indicate that the coatings are disordered semiconductors in which the hopping conduction mechanism operates.

中文翻译：

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磁控溅射沉积Al–B–Si–C涂层的结构与性能

摘要

研究了通过AlB ₂，SiC和石墨靶的双磁控溅射获得的Al–B，Al–B–C和Al–B–Si–C涂层的结构，机械和电物理性质。在沉积期间，施加到含AlB ₂的靶（I _AlB）的电流用作主要可变参数。沉积涂层的特征在于X射线衍射，红外光谱（FTIR），X射线光电子能谱（XPS），努氏显微硬度测试和电流-电压特性测量。可以确定所有沉积的涂层都是X射线无定形材料。FTIR和XPS结果表明，在所有沉积的涂层中，B–B，Al–B，BO–和Al–O键是主要键。用AlB ₂双重溅射靶材C，AlB ₂和SiC导致在沉积涂层中形成额外的BC ，Si-C和CC主键。已经发现，随着BB和Al-B键数量的增加，涂层随着I _AlB电流的增加而增强。Al-B和Al-B-C涂层的电流-电压特性表明，该涂层是无序半导体，在其中运行了跳跃传导机制。