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Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn3+ ions in GaN
New Journal of Physics ( IF 3.3 ) Pub Date : 2020-12-16 , DOI: 10.1088/1367-2630/abcce7
D Sztenkiel 1 , K Gas 1 , J Z Domagala 1 , D Hommel 2, 3 , M Sawicki 1
Affiliation  

A ferromagnetic coupling between localized Mn spins was predicted in a series of ab initio and tight binding works and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentration, x $\lesssim$ 0.03, the paramagnetic properties of this material were successfully described using single ion crystal field model approach. However, there is still a need to investigate the effect of magnetic coupling on magnetic properties of dilute magnetic semiconductors using approach that goes beyond the classical approximation, e.g. Landau-Lifshitz-Gilbert one. Therefore, in order to obtain the magnetization M(T,B) of (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of uniaxial anisotropy field change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4.

中文翻译:

GaN 中 Mn3+ 离子对、三重态和四重态磁响应的晶体场模型模拟

局部Mn自旋之间的铁磁耦合在一系列从头结合和紧束缚工作中得到预测,并通过实验验证了稀磁性半导体Ga$_{1-x}$Mn$_x$N。在小Mn浓度x$\lesssim$ 0.03的限制下,使用单离子晶体场模型方法成功地描述了该材料的顺磁性。然而,仍然需要使用超越经典近似的方法,例如Landau-Lifshitz-Gilbert 方法来研究磁耦合对稀磁性半导体的磁特性的影响。因此,为了在相互作用的磁中心存在的情况下获得 (Ga,Mn)N 的磁化强度 M(T,B),我们将先前的 GaN 中单个置换 Mn$^{3+}$ 离子的模型扩展为考虑对,通过铁磁超交换相互作用耦合的 Mn$^{3+}$ 离子的三重态和四重态。使用这种方法,我们研究了磁性特性,特别是单轴各向异性场的大小如何随着给定簇中磁性 Mn$^{3+}$ 离子的数量从 1 增加到 4 发生变化。
更新日期:2020-12-16
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