Non-coherent Σ3{111} grain boundaries (GBs) with a positive deviation in the tilt angle (θ _〈110〉>70.5) exhibit a high recombination activity in high-performance multicrystalline silicon ingots. Most of the GB segments are composed of edge-type dislocations with the Burgers vector b of a/3〈111〉, unlike Lomer dislocations with b=a/2〈110〉 observed for negative deviations, arranged on coherent Σ3{111} GB segments. Stretched 〈110〉 reconstructed bonds along the tilt axis are introduced so as not to form dangling bonds, and large strains are generated around the dislocation cores. Oxygen and carbon atoms segregating due to the strains would induce the recombination activity.

非共格 Σ3{111} 晶界 (GBs) 具有正偏斜角 ( θ _<110> >70.5) 在高性能多晶硅锭中表现出高复合活性。大多数 GB 段由边缘型位错组成，Burgers 矢量b为a /3<111>，不像 Lomer 位错b = a /2<110> 观察到负偏差，排列在相干 Σ3{111} GB段。引入沿倾斜轴拉伸的<110>重构键以便不形成悬空键，并且在位错核周围产生大应变。由于菌株而分离的氧和碳原子将诱导重组活性。