We demonstrated GaN-based vertical-cavity surface emitting lasers (VCSELs) with 5–30 μm wide nano-height cylindrical waveguide formed by BCl₃ etching. A 5nm-depth etching with BCl₃ showed the most efficient current blocking at the interface of the etched p⁺⁺-GaN and an ITO electrode among the cases with BCl₃, Ar, or O₂, which could be due to not only etching damages but also diffused B atoms into the etched surface. While room-temperature continuous-wave operations of the VCSELs with the large apertures were demonstrated, maximum light output power values of the large aperture VCSELs seemed limited by nonuniform current injection and device thermal resistances.

我们证明基于GaN的垂直腔面发射具有5-30激光器（VCSEL）μ米宽纳米高度圆柱形波导内Bcl形成₃的蚀刻。甲5nm的深度与Bcl蚀刻₃显示了在经蚀刻的p的界面处的最有效的电流阻挡⁺⁺ -GaN和与Bcl的案件中的ITO电极₃中，Ar或O ₂，这可能是由于不仅蚀刻损坏，但B原子也扩散到蚀刻的表面。虽然展示了具有大孔径的VCSEL的室温连续波操作，但大孔径VCSEL的最大光输出功率值似乎受到电流注入不均匀和器件热阻的限制。