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Atmospheric vapor-transport method for growth of VO2 single-crystalline nano- and microwires
Journal of the Korean Physical Society ( IF 0.6 ) Pub Date : 2020-12-15 , DOI: 10.1007/s40042-020-00015-9
Jin Chul Cho , Tetiana Slusar , Jun-Hwan Shin , Bong Jun Kim , Hyun-Tak Kim

The growth of high-quality single crystalline nano- and microwires of VO 2 is necessary to study the Mott transition and to expand its applications. Here, we propose a modified vapor-transport method characterized by a one-step process that does not require a vacuum and can be performed at the atmospheric pressure conditions with a nitrogen gas flow. This, so called atmospheric vapor-transport (AVT) method, is simpler in terms of the growth procedure and the apparatus installation when compared to the widely used vacuum-based techniques. The crystalline wires obtained by AVT method show a sharp and large, up to five orders, change in the electrical resistance near T C ≈ 340 K, along with the M1–M2–R structural phase transition.

中文翻译:

用于生长 VO2 单晶纳米线和微米线的大气蒸汽传输方法

VO 2 的高质量单晶纳米线和微线的生长对于研究莫特转变和扩展其应用是必要的。在这里,我们提出了一种改进的蒸汽传输方法,其特点是不需要真空的一步过程,并且可以在大气压条件下使用氮气流进行。与广泛使用的基于真空的技术相比,这种所谓的大气蒸汽传输 (AVT) 方法在生长过程和设备安装方面更简单。通过 AVT 方法获得的结晶线在 TC ≈ 340 K 附近显示出尖锐而大的电阻变化,高达 5 个数量级,以及 M1-M2-R 结构相变。
更新日期:2020-12-15
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