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Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere
Technical Physics Letters ( IF 0.6 ) Pub Date : 2020-12-14 , DOI: 10.1134/s1063785020110292
D. A. Zakgeim , D. I. Panov , V. A. Spiridonov , A. V. Kremleva , A. M. Smirnov , D. A. Bauman , A. E. Romanov , M. A. Odnoblyudov , V. E. Bougrov

Abstract

Results of successful experiments on the growth of gallium oxide (β-Ga2O3) crystals by the Czochralski method are reported. The influence of growth atmosphere on the crystalline perfection of obtained material has been studied. It established that high-quality transparent optical crystals can be obtained provided the atmosphere contains about 5 vol % oxygen. As-grown β-Ga2O3 crystals were characterized by X-ray diffraction and optical transmission measurements.



中文翻译:

含氧气氛中通过切克劳斯基方法从熔体中生长的体积氧化镓晶体

摘要

上的氧化镓的生长成功实验的结果(的β-Ga 2 ö 3)据报道通过Czochralski方法结晶。已经研究了生长气氛对获得的材料的结晶完美度的影响。建立了只要大气中含有约5vol%的氧气就可以得到高质量的透明光学晶体的方法。如此生长的β-Ga 2个ö 3晶体通过X射线衍射和光学透射测量表征。

更新日期:2020-12-14
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