Abstract

We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm spectral range. The heterostructures were characterized by measuring photoluminescence (PL) emission and X-ray diffraction. It is established that variation of the ratio of quantum-well and barrier-layer thicknesses in the SL allows controlled shift of the PL peak position for lasing in the 1.3-μm range at almost constant PL efficiency.

中文翻译：

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短周期InGaAs / InGaAlAs超晶格参数对光致发光效率的影响

摘要

我们已经研究了基于InP衬底上分子束外延制造的短周期InGaAs / InGaAlAs超晶格（SLs）的异质结构，旨在用作1.3微米光谱范围内的垂直腔面发射激光器的有源区域。通过测量光致发光（PL）发射和X射线衍射来表征异质结构。可以确定的是，SL中量子阱和势垒层厚度之比的变化允许在1.3μm范围内以几乎恒定的PL效率进行激光发射时，PL峰值位置的受控偏移。