Abstract

The current–voltage (I–V) characteristics of n-GaP–p-(InSb)_{1 – x}(Sn₂)_x (0 ≤ x ≤ 0.05) heterostructures have been studied. At low voltages (V < 0.5 V), the I–V curve is described by the exponential law I = I₀exp(qV/ckT), while at higher voltages (from 0.5 to 1.8 V) it obeys the power law I = AV^m with various values of coefficient A and exponent m dependent on the voltage. At still higher voltages (from 2.10 to 2.48 V), the characteristic exhibits a sublinear behavior described by the equation V = V₀exp(Jd/2kTμ_pN_t).

中文翻译：

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n -GaP– p-（InSb）1 – x（Sn 2）x异质结构的电流-电压特性的特殊性

摘要

的电流-电压（我- V）的特性ñ -GaP- p - （锑化铟）_{1 - X}（SN ₂）_X（0≤ X ≤0.05）异质结构进行了研究。在低电压（V <0.5 V）时，我- V曲线由指数定律描述我 =我₀ EXP（QV / CKT），而在更高的电压（0.5〜1.8V）它遵循幂定律我=具有各种系数A的AV ^m指数m取决于电压。在更高的电压（从2.10到2.48 V）时，特性表现出次线性行为由等式描述V = V ₀ EXP（JD / 2 KT μ _p Ñ_吨）。