Abstract The paper discusses the development of optical-emission and mass-spectral with inductively coupled plasma (ICP-OES/MS) analysis procedures for determination of traces in cadmium. These procedures are based on the preliminary concentration of traces by selective volatilization of cadmium in vacuum through the film of its own oxide and the subsequent ICP-OES/MS analysis of concentrate. The relative concentration coefficient for the entire array of the experimental data is at least 150. The trace limits of detection (LODs) have been evaluated for the developed ICP-OES and ICP-MS analysis procedures. The ICP-OES method allows to determine 43 traces (Ag, Al, As, Au, B, Ba, Be, Ca, Ce, Co, Cr, Cu, Dy, Er, Fe, Ga, Gd, Hf, Ho, K, La, Li, Lu, Mg, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Ti, V, W, Y, Yb, Zn, Zr) at the concentration level from 0.1 to 40 ng·g−1. At the same time implementation of the ICP-MS method provides data about 41 impurities (Ag, Al, As, Au, B, Ba, Be, Bi, Ce, Co, Cr, Cu, Dy, Er, Ga, Gd, Hf, Ho, In, La, Lu, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Te, Ti, V, W, Y, Yb, Zn, Zr) with LODs from 0.002 to 10 ng·g−1.

中文翻译：

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基质挥发真空富集高纯镉的多元素光发射和质谱分析

摘要 本文讨论了利用电感耦合等离子体 (ICP-OES/MS) 分析方法测定镉中痕量的光学发射和质谱的发展。这些程序基于通过镉在真空中通过其自身的氧化物膜选择性挥发来初步浓缩痕量，然后对浓缩物进行 ICP-OES/MS 分析。整个实验数据阵列的相对浓度系数至少为 150。已针对开发的 ICP-OES 和 ICP-MS 分析程序评估了痕量检测限 (LOD)。ICP-OES 方法可以测定 43 种痕量（Ag、Al、As、Au、B、Ba、Be、Ca、Ce、Co、Cr、Cu、Dy、Er、Fe、Ga、Gd、Hf、Ho、K , La, Li, Lu, Mg, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Ti, V, W, Y, Yb, Zn, Zr) 在 0.1 到 40 ng·g-1 的浓度水平。同时实施 ICP-MS 方法可提供 41 种杂质（Ag、Al、As、Au、B、Ba、Be、Bi、Ce、Co、Cr、Cu、Dy、Er、Ga、Gd、Hf）的数据, Ho, In, La, Lu, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Te, Ti, V, W, Y, Yb, Zn, Zr) LOD 从 0.002 到 10 ng·g-1。