Abstract A k.p theoretical study of the optical properties of GaInAs and strained GaInAs/GaAs alloys is presented in this study. The complex dielectric function and the refractive index as a function of indium content were calculated. A very good agreement between the predictions made and the experimental data was obtained. The critical point transitions, static dielectric functions and zero frequency values of the refractive index, n(0), were calculated, showing a strong dependence on the biaxial strain. Finally, the theoretical calculations of the dependence of n(0) on the band-gap energy predict, for unstrained alloys, a similar relationship to that proposed by Anani et al. The Ravindra model showed the best agreement with our predictions for strained alloys.

中文翻译：

---

应变和铟含量对GaInAs/GaAs三元合金光学性能的影响

摘要 本研究介绍了 GaInAs 和应变 GaInAs/GaAs 合金光学性能的 kp 理论研究。计算复合介电函数和作为铟含量函数的折射率。得到的预测和实验数据之间非常吻合。计算了临界点转变、静态介电函数和零频率值的折射率 n(0)，显示出对双轴应变的强烈依赖性。最后，n(0) 对带隙能量的依赖性的理论计算预测，对于无应变合金，与 Anani 等人提出的关系类似。Ravindra 模型与我们对应变合金的预测最相符。