We present a new approach to the study of the stability of vacuum electronic devices (VEDs) using the Naval Research Laboratory (NRL) large-signal code TESLA-Z. The approach combines a precomputed complex impedance matrix, $\hat {Z}$ , describing the structure with a TESLA-Z computed admittance matrix, $\hat {Y}_{ \boldsymbol {bt}}$ , characterizing the electron beam and beam tunnel. The gain matrix $\hat {G}$ for a given device then can be found as the product of the reduced $Z$ -matrix of the structure and admittance matrix $\hat {Y}_{ \boldsymbol {bt}}$ of the beam tunnel. Subsequent analysis of the eigenvalues of the gain matrix $\hat {G}$ using Nyquist’s method determines the stability of the device. We discuss the details of the new algorithm and illustrate its application to an experimental G-band serpentine TWT.

中文翻译：

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真空电子器件稳定性的数值测定

我们提出了一种使用海军研究实验室 (NRL) 大信号代码 TESLA-Z 研究真空电子器件 (VED) 稳定性的新方法。该方法结合了预先计算的复阻抗矩阵， $\hat {Z}$ ，用 TESLA-Z 计算的导纳矩阵描述结构， $\hat {Y}_{ \boldsymbol {bt}}$ ，表征电子束和束隧道。增益矩阵 $\hat {G}$ 对于给定的设备，然后可以找到作为减少的产品 $Z$ -结构矩阵和导纳矩阵 $\hat {Y}_{ \boldsymbol {bt}}$ 梁隧道。增益矩阵特征值的后续分析 $\hat {G}$ 使用 Nyquist 方法确定设备的稳定性。我们讨论了新算法的细节，并说明了它在实验性 G 波段蛇形 TWT 中的应用。