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Transient Overshoot Voltages during VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2020-12-01 , DOI: 10.1109/tdmr.2020.3037539
Steffen Holland , Guido Notermans , Hans-Martin Ritter

The transient overshoot behavior of bipolar devices is investigated by means of very fast transmission line pulses (VF-TLP). All devices under investigation, a forward biased diode, an open base transistor and a SCR comprise a lowly doped region (LDR). Measurements have been done for rise times of 0.3ns and 1ns. To separate the voltage drop inside the device from parasitic contributions TCAD simulations have been performed. The analysis shows that for a fixed length of LDR the effect of the lowly doped region depends on the type of the device and is linked to the charge carrier distribution inside the LDR. In addition, the effect of the length of the LDR on transient voltage overshoot is compared for a forward biased diode and an SCR.

中文翻译:

存在低掺杂区域的双极器件 VF-TLP 脉冲期间的瞬态过冲电压

双极器件的瞬态过冲行为通过非常快的传输线脉冲 (VF-TLP) 进行研究。正在研究的所有器件、一个正向偏置二极管、一个开路基极晶体管和一个 SCR 都包含一个低掺杂区 (LDR)。已针对 0.3ns 和 1ns 的上升时间进行了测量。为了将器件内部的电压降与寄生贡献分开,已经执行了 TCAD 模拟。分析表明,对于固定长度的 LDR,低掺杂区域的影响取决于器件的类型,并与 LDR 内的电荷载流子分布有关。此外,还比较了正向偏置二极管和 SCR 的 LDR 长度对瞬态电压过冲的影响。
更新日期:2020-12-01
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