The prospects of Terahertz (0.3 THz-5.0 THz) power generation with laterally doped hybrid Graphene/Si (Single-Layer ( $\text{S}_{\mathrm{ L}}\text{G}$ ), Bi-Layer ( $\text{B}_{\mathrm{ L}}\text{G}$ ) and Multi-Layer ( $\text{M}_{\mathrm{ L}}\text{G}$ )) Mixed Tunneling Avalanche Transit Time (GL-h-MITATT) oscillator is explored through an indigenously developed and experimentally verified self-consistent, non-linear, 2D-quantum drift diffusion simulator. The paper also reports the reliability study and feasibility of its development in details. The validity of the model is established by comparing experimental observation with simulation data for 0.2THz Si-oscillator under similar electrical operating conditions. The role of parasitic series resistance in top and side contact GL-MITATT oscillators are further studied. It is interesting to observe that compared to top-contact technology, side-contact technology results in lower contact resistance. With the increasing graphene layer in active region, the power output ( ${\sim }14\times 10^{9}$ Wm⁻²), breakdown voltage ( $\sim 8\text{V}$ ) and efficiency (~40%) increase significantly. The novelty of the study is in considering the laterally doped active region with top and side contact technology in exotic ATT devices and subsequent impact ionization & band-gap engineering boosting in performance enhancement. Additionally, the effect of series resistance is considered to obtain much reliable large-signal RF power data from the device under test. To the best of authors’ knowledge, this is the first report on DC and RF characterization of laterally doped Graphene/Si hybrid MITATT oscillators at THz region, by using an in-house simulator and corresponding fabrication feasibility.

中文翻译：

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混合多石墨烯/硅雪崩传输时间 太赫兹功率振荡器：理论可靠性和实验可行性研究

横向掺杂混合石墨烯/硅（单层（Single-Layer））太赫兹（0.3 THz-5.0 THz）发电的前景 $\text{S}_{\mathrm{ L}}\text{G}$ ), 双层 ( $\text{B}_{\mathrm{ L}}\text{G}$ ) 和多层 ( $\text{M}_{\mathrm{ L}}\text{G}$ )) 混合隧道雪崩传输时间 (GL-h-MITATT) 振荡器通过本地开发和实验验证的自洽、非线性、二维量子漂移扩散模拟器进行探索。论文还详细报道了其可靠性研究和开发可行性。通过对0.2THz硅振荡器在类似电气操作条件下的实验观察与仿真数据进行比较，建立了模型的有效性。进一步研究了寄生串联电阻在顶部和侧面接触 GL-MITATT 振荡器中的作用。有趣的是，与顶部接触技术相比，侧接触技术导致更低的接触电阻。随着有源区石墨烯层的增加，功率输出（ ${\sim }14\times 10^{9}$ Wm ^-2 )，击穿电压 ( $\sim 8\text{V}$ ) 和效率 (~40%) 显着提高。该研究的新颖之处在于考虑了在奇异的 ATT 器件中采用顶部和侧面接触技术的横向掺杂有源区以及随后的碰撞电离和带隙工程提升性能。此外，还考虑了串联电阻的影响，以便从被测设备中获得非常可靠的大信号 RF 功率数据。据作者所知，这是通过使用内部模拟器和相应的制造可行性在太赫兹区域对横向掺杂的石墨烯 / Si 混合 MITATT 振荡器进行直流和射频表征的第一份报告。