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A Gate-Grounded NMOS based Dual-Directional ESD Protection with High Holding Voltage for 12V application
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2020-12-01 , DOI: 10.1109/tdmr.2020.3022897 Kyoung-Il Do , Bo-Bae Song , Yong-Seo Koo
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2020-12-01 , DOI: 10.1109/tdmr.2020.3022897 Kyoung-Il Do , Bo-Bae Song , Yong-Seo Koo
Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding voltage. Most existing dual-direction ESD protection devices are based on silicon-controlled rectifiers (SCR). Among them, the low triggering dual-directional SCR (LTDDSCR) has good trigger characteristics, but with low holding voltage. In contrast, the proposed high-holding-voltage dual-direction NMOS (HHDDNMOS) operates using two NPN parasitic bipolar transistors connected to the ESD discharge path and has a very high holding voltage and excellent snapback characteristics. The electrical and dual-directional characteristics of HHDDNMOS were analyzed using the transmission-line -pulsing system, and the latch-up immunity was verified by conducting transient-induced latch-up tests using the 0.18- $\mu \text{m}$ BCD process.
中文翻译:
用于 12V 应用的具有高保持电压的基于栅极接地 NMOS 的双向 ESD 保护
由于其出色的面积效率,双向静电放电 (ESD) 保护设备可以释放正负 ESD 浪涌。本研究提出了一种具有高保持电压的新型双向 MOSFET ESD 保护器件。大多数现有的双向 ESD 保护器件都基于可控硅整流器 (SCR)。其中,低触发双向可控硅(LTDDSCR)具有良好的触发特性,但保持电压低。相比之下,所提出的高保持电压双向 NMOS (HHDDNMOS) 使用两个连接到 ESD 放电路径的 NPN 寄生双极晶体管进行操作,并具有非常高的保持电压和出色的回弹特性。使用传输线脉冲系统分析了HHDDNMOS的电气特性和双向特性,
更新日期:2020-12-01
中文翻译:
用于 12V 应用的具有高保持电压的基于栅极接地 NMOS 的双向 ESD 保护
由于其出色的面积效率,双向静电放电 (ESD) 保护设备可以释放正负 ESD 浪涌。本研究提出了一种具有高保持电压的新型双向 MOSFET ESD 保护器件。大多数现有的双向 ESD 保护器件都基于可控硅整流器 (SCR)。其中,低触发双向可控硅(LTDDSCR)具有良好的触发特性,但保持电压低。相比之下,所提出的高保持电压双向 NMOS (HHDDNMOS) 使用两个连接到 ESD 放电路径的 NPN 寄生双极晶体管进行操作,并具有非常高的保持电压和出色的回弹特性。使用传输线脉冲系统分析了HHDDNMOS的电气特性和双向特性,