This article describes the electrical degradation in the I-V characteristics and the Current Transfer Ratio (CTR) of commercial optocoupler (4N35) exposed to an electron beam. The devices are exposed to an electron beam of various doses and the I-V characteristics of LED and output characteristics of the phototransistor are measured as a function of accumulated electron dose. The result indicates that 10 MeV electron of 1.5 kGy dose results in considerable degradation in CTR. Further, it appears that the phototransistor of the optocoupler is more susceptible to radiation damage than the LED part and care must be exercised when these devices are used for space applications.

中文翻译：

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电子束引起光电耦合器电气特性退化

本文描述了暴露于电子束的商用光耦合器 (4N35) 的 IV 特性和电流传输比 (CTR) 的电气退化。器件暴露在不同剂量的电子束下，LED 的 IV 特性和光电晶体管的输出特性作为累积电子剂量的函数进行测量。结果表明，1.5 kGy 剂量的 10 MeV 电子导致 CTR 显着下降。此外，光耦合器的光电晶体管似乎比 LED 部件更容易受到辐射损坏，因此在将这些设备用于太空应用时必须小心谨慎。