Double dielectric DBR based GaN-based micro cavity light emitting devices with two different structures were fabricated, and their thermal characteristics were investigated. To improve thermal dissipation, an AlN current confinement layer with a much higher thermal conductivity than SiO2 and an electroplated copper heat sink were utilized. The thermal resistance of the device decreased from 923 K/W to 457 K/W, half of that obtained with the typically used SiO2 current confinement layer and bonded substrate. This is the lowest reported value in GaN-based micro cavity light-emitting devices with double dielectric DBRs. Temperature distribution and heat flux inside of the device was simulated based on a steady state quasi three-dimensional cylindrical model. The results show that heat transport in vertical direction is efficiently bypassing the bottom DBR to the copper plate. This work provides an effective method to improve thermal characteristics of GaN-based micro cavity light-emitting devices with double dielectric DBR structure.

中文翻译：

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GaN基微腔发光器件散热的改善

制备了具有两种不同结构的双介电 DBR 基 GaN 基微腔发光器件，并研究了它们的热特性。为了改善散热，使用了热导率远高于 SiO2 的 AlN 电流限制层和电镀铜散热器。该器件的热阻从 923 K/W 降低到 457 K/W，是使用通常使用的 SiO2 电流限制层和键合衬底获得的热阻的一半。这是具有双介电 DBR 的基于 GaN 的微腔发光器件中报告的最低值。基于稳态准三维圆柱模型对装置内部的温度分布和热通量进行了模拟。结果表明，垂直方向的热传输有效地绕过底部 DBR 到铜板。该工作为改善具有双介电DBR结构的GaN基微腔发光器件的热特性提供了一种有效的方法。