Understanding the nanoscale material removal process in chemical mechanical polishing (CMP) is of fundamental importance for the operation and further development of CMP. In this study, the nanoscale material removal processes of both fused silica glass and BK7 glass were investigated based on single‐pad‐asperity polishing experiments. The results indicate that the material removal characteristics are highly dependent on the composition and structure of glass materials. In the mechanically induced chemical bonding removal mode, only atoms locate near the outermost several layers can participate in the formation and breakage of interfacial bridge bonds. Moreover, the force on the abrasive particle must exceed a threshold value to induce significant removal of Si atoms from the glass substrate, because as the breakage of Si_glass–O backbonds does not occur in low‐stress conditions. We reveal for the first time that the chemical and mechanical properties of the topmost layer, which is recognized as densification, hydrated, or redeposition layer, have not been significantly affected by the mechanical action of the abrasive particles when polishing in this kind of material removal mode. The results are expected to provide a deeper insight into the nanoscale material removal mechanism during glass CMP.

中文翻译：

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化学机械抛光过程中BK7和熔融石英玻璃纳米材料去除工艺的研究

理解化学机械抛光（CMP）中的纳米级材料去除工艺对于CMP的操作和进一步发展至关重要。在这项研究中，基于单垫粗糙抛光实验研究了熔融石英玻璃和BK7玻璃的纳米级材料去除过程。结果表明，材料的去除特性高度依赖于玻璃材料的组成和结构。在机械诱导的化学键去除模式中，只有位于最外层附近的原子才能参与界面桥键的形成和破坏。而且，在磨料颗粒上的力必须超过阈值，以引起从玻璃基板中显着除去Si原子，因为随着Si的破裂_玻璃–在低应力条件下不会发生O型背胶。我们首次揭示，在这种材料去除过程中，抛光时最顶层的化学和机械性能（被确认为致密化，水合或再沉积层）并未受到磨粒的机械作用的显着影响。模式。预期结果将提供对玻璃CMP期间纳米级材料去除机理的更深入了解。