Electronic spin precession and filtering are measured in the molecular field of magnetic thin films. Lab‐on‐chip experiments allow injection of electrons with energies between 0.8 and 1.1 eV, an energy range not yet explored in spin precession experiments. While filtering angles agree with previous reported values measured at much higher electron energies, spin precession angles of 2.5° in CoFe and 0.7° in Co per nanometer film thickness could be measured which are 30 times smaller than those previously measured at 7 eV. On the basis of ab initio calculations, the results are explained and it is shown that the band structure and layer roughness are playing a key role at low energy.

中文翻译：

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磁性薄膜分子场中的低能自旋进动

电子自旋进动和滤波是在磁性薄膜的分子场中测量的。芯片实验室实验允许注入能量在0.8到1.1 eV之间的电子，这是自旋进动实验中尚未探索的能量范围。尽管滤光角与先前报道的在更高电子能量下测得的值相符，但可以测量到每纳米膜厚度CoFe中2.5°和Co中0.7°的自旋进动角比以前在7 eV时测得的旋转角小30倍。在从头算的基础上，对结果进行了解释，结果表明在低能量下能带结构和层粗糙度起着关键作用。