In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si_1−x−yGe_xSn_y ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value as high as 1095 μWm⁻¹K⁻² had been achieved using B-ion implanted and short-term rapid thermal annealing (RTA) process. In addition, a measuring scheme for micro TEG without external load resistance was designed. In one measuring session, multiple parameters can be measured. The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K, and a cross-sectional power density has reached up to 0.58 mW/cm², which is a superior value for wearable device. The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.

在这项研究中，开发了一种由绝缘体上的薄膜Si _1-x-y Ge _x Sn _y三元合金半导体组成的微型面内p型热电发生器（TEG），以有效利用此类废热。作为人体。 使用B离子注入和短期快速热退火（RTA）工艺已经获得了高达1095μWm ^-1 K ^-2的功率因数。此外，设计了一种无外部负载电阻的微型TEG测量方案。在一个测量会话中，可以测量多个参数。通过半导体工艺制备的微型单臂TEG在15 K的温差下可输出0.29 nW的功率，并且截面功率密度高达0.58 mW / cm²，这是可穿戴设备的优越价值。这项研究的发现对于改进微型TEG的可穿戴设备性能和测量输出功率具有重要的参考价值。